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VN1710M - N-Channel Enhancement-Mode MOS Transistors

Download the VN1710M datasheet PDF. This datasheet also covers the VN1710L variant, as both devices belong to the same n-channel enhancement-mode mos transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (VN1710L-Siliconix.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number VN1710M
Manufacturer Siliconix
File Size 94.07 KB
Description N-Channel Enhancement-Mode MOS Transistors
Datasheet download datasheet VN1710M Datasheet

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Other Datasheets by Siliconix

Part Number Description
VN1710L N-Channel Enhancement-Mode MOS Transistors
VN1706B N-Channel Enhancement-Mode MOS Transistors
VN1706D N-Channel Enhancement-Mode MOS Transistors
VN1706L N-Channel Enhancement-Mode MOS Transistors
VN1706M N-Channel Enhancement-Mode MOS Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
~Siliconix ~ incorporated PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (.0. ) (A) PACKAGE VN1710L 170 10 0.17 TO-92 VN171 OM 170 10 0.19 TO-237 Performance Curves: VNDB24 (See Section 7) VN1710 SERIES N-Channel Enhancement-Mode MOS Transistors TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN TO-237 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL VN1710L VN1710M Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 TA= 25°C TA = 100°C Power Dissipation TA= 25°C T A = 100°C Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) VOS VGS 10 10M Po Tjo T 5 tg TL 170 170 ±30 0.17 ±30 0.19 0.11 0.
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