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SD215DE - N-Channel Lateral DMOS FETs

Download the SD215DE datasheet PDF. This datasheet also covers the SD211DE variant, as both devices belong to the same n-channel lateral dmos fets family and are provided as variant models within a single manufacturer datasheet.

Description

The SD211DE/SST211 series consists of enhancementmode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications.

The SD211 may be used for "5-V analog switching or as a high speed driver of the SD214.

The SD214 is normally used for "10-V analog switching.

Features

  • D Ultra-High Speed Switching.
  • tON: 1 ns D Ultra-Low Reverse Capacitance: 0.2 pF D Low Guaranteed rDS @ 5 V D Low Turn-On Threshold Voltage D N-Channel Enhancement Mode Benefits D High Speed System Performance D Low Insertion Loss at High Frequencies D Low Transfer Signal Loss D Simple Driver Requirement D Single Supply Operation.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SD211DE-Siliconix.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SD215DE
Manufacturer Siliconix
File Size 75.74 KB
Description N-Channel Lateral DMOS FETs
Datasheet download datasheet SD215DE Datasheet

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Other Datasheets by Siliconix

Part Number Description
SD2100 n-channel D-MOS FET
SD210DE N-Channel Lateral DMOS FETs
SD2110 n-channel dual enhancement mode lateral D-MOS FET
SD211DE N-Channel Lateral DMOS FETs
SD2120 n-channel dual enhancement mode lateral D-MOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SD211DE/SST211 Series N-Channel Lateral DMOS FETs Product Summary Part Number SD211DE SD213DE SD215DE SST211 SST213 SST215 V(BR)DS Min (V) 30 10 20 30 10 20 VGS(th) Max (V) 1.5 1.5 1.5 1.5 1.5 1.5 SD211DE SD213DE SD215DE SST211 SST213 SST215 rDS(on) Max (W) 45 @ VGS = 10 V 45 @ VGS = 10 V 45 @ VGS = 10 V 50 @ VGS = 10 V 50 @ VGS = 10 V 50 @ VGS = 10 V Crss Max (pF) 0.5 0.5 0.5 0.5 0.5 0.5 tON Max (ns) 2 2 2 2 2 2 Features D Ultra-High Speed Switching—tON: 1 ns D Ultra-Low Reverse Capacitance: 0.
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