SD2110 - n-channel dual enhancement mode lateral D-MOS FET

Siliconix

Key Features

High Figure-of-Merit gfs/C.
Ultra Low Feedback Capacitance 0.3 pF.
Low Output Capacitance.
Low Input (Gate) Leakage.
Non-Critical Operating CurrentNoltage.
Matched Characteristics.

SD2110 n-channel dual enhancement mode lateral d-mos fet by Siliconix - Datasheet Preview

Datasheet Details

Part number	SD2110
Manufacturer	Siliconix
File Size	80.93 KB
Description	n-channel dual enhancement mode lateral D-MOS FET
Datasheet	SD2110 Datasheet

Other Datasheets by Siliconix

Part Number	Description
SD211DE	N-Channel Lateral DMOS FETs
SD2100	n-channel D-MOS FET
SD210DE	N-Channel Lateral DMOS FETs
SD2120	n-channel dual enhancement mode lateral D-MOS FET
SD212DE	N-Channel Lateral DMOS FETs
SD213DE	N-Channel Lateral DMOS FETs
SD214DE	N-Channel Lateral DMOS FETs
SD215DE	N-Channel Lateral DMOS FETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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n-channel dual enhancement mode -o lateral D-MOS FETs c::4 designed lor. · · Q CI) • Wideband DiHerential Amplifiers • Cascode High Slew Rate Amplifiers • Single Ended High-Speed Amps • High-Speed Analog Comparators • Sample & Hold Ckts • High-Speed Matched Analog Switches H Silicanix FEATURES • High Figure-of-Merit gfs/C • Ultra Low Feedback Capacitance 0.3 pF • Low Output Capacitance • Low Input (Gate) Leakage • Non-Critical Operating CurrentNoltage • Matched Characteristics BENEFITS • High Frequency Performance • High Slew Rate • High Speed Switching • Tight Temperature Tracking ABSOLUTE MAXIMUM RATINGS (25°C) Drain-to-Drain Voltage ....................... ±25V Drain-Source Voltage ........................ +25V Drain Current ..............................