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SSM60T03GP - N-channel Enhancement-mode Power MOSFET

General Description

The SSM60T03GS is in a TO-263 package, which is widely used for commercial and industrial surface-mount applications.

This device is suitable for low-voltage applications such as DC/DC converters.

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Datasheet Details

Part number SSM60T03GP
Manufacturer Silicon Standard
File Size 419.69 KB
Description N-channel Enhancement-mode Power MOSFET
Datasheet download datasheet SSM60T03GP Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSM60T03GP,S N-channel Enhancement-mode Power MOSFET Low gate-charge Simple drive requirement Fast switching Pb-free, RoHS compliant. D BV DSS R DS(ON) ID 30V 12mΩ 45A G S DESCRIPTION The SSM60T03GS is in a TO-263 package, which is widely used for commercial and industrial surface-mount applications. This device is suitable for low-voltage applications such as DC/DC converters. The through-hole version, the SSM60T03GP in TO-220, is available for vertical-mounting, where a small footprint is required on the board, and/or an external heatsink is to be attached. These devices are manufactured with an advanced process, permitting operation up to a maximum junction temperature of 175°C.