SSM60T03GH Datasheet | Silicon Standard

SSM60T03GH,J N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM60T03 acheives fast switching performance with low gate charge without a plex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. The SSM60T03GH is in a TO-252 package, which is widely used for mercial and industrial surface-mount applications. The through-hole version, the SSM60T03GJ in TO-251, is available for vertical mounting, where a small footprint is required on the board, and/or an external heatsink is to be attached. These devices are manufactured with an advanced process, providing improved on-resistance and switching performance. The devices have a maximum junction temperature rating of 175°C for improved thermal margin and reliability. 30V 12mΩ 45A Pb-free; RoHS-pliant TO-251 (IPAK) and TO-252 (DPAK) G G D S D S TO-251 (suffix J) TO-252 (suffix...