SVS12N80F Datasheet PDF (800V DP MOS POWER TRANSISTOR) | Download Silan Microelectronics SVS12N80F

SVS12N80F - 800V DP MOS POWER TRANSISTOR

Description

SVS12N80F/FJ/S/FJH/PN is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

Features

12A,800V, RDS(on)(typ. )=0.37@VGS=10V.
New revolutionary high voltage technology.
Ultra low gate charge.
Periodic avalanche rated.
Extreme dv/dt rated.
High peak current capability 2 1 12 3 3 1.Gate 2.Drain 3.Source TO-220FJ-3L 12 3 12 3 TO-220FJH-3L TO-3P 12 3 TO-220F-3L 1 3 TO-263-2L.

Datasheet Details

Part number	SVS12N80F
Manufacturer	Silan Microelectronics
File Size	366.92 KB
Description	800V DP MOS POWER TRANSISTOR
Datasheet	SVS12N80F Datasheet

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Full PDF Text Transcription

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Silan Microelectronics SVS12N80F/FJ/S/FJH/PN_Datasheet 12A, 800V DP MOS POWER TRANSISTOR DESCRIPTION SVS12N80F/FJ/S/FJH/PN is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES  12A,800V, RDS(on)(typ.)=0.37@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability 2 1 12 3 3 1.Gate 2.Drain 3.

Published: Mar 9, 2020 |