SVS12N80F Key Features
- 12A,800V, RDS(on)(typ.)=0.37@VGS=10V
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- High peak current capability
- Part: SVS12N80F
- Manufacturer: Silan Microelectronics
- Size: 366.92 KB
Related Silan Microelectronics Datasheets
| Part Number | Description |
|---|---|
| SVS12N80FJ | 800V DP MOS POWER TRANSISTOR |
| SVS12N80FJH | 800V DP MOS POWER TRANSISTOR |
| SVS12N80PN | 800V DP MOS POWER TRANSISTOR |
| SVS12N80S | 800V DP MOS POWER TRANSISTOR |
| SVS11N60FD2 | 600V DP MOS POWER TRANSISTOR |
SVS12N80F Description
SVS12N80F/FJ/S/FJH/PN is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.