∗ 9A,800V,RDS(on)(typ.)=0.78Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF9NE80F Pa.

SVF9NE80F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tail.

SVF9N65F

SVF9N90F

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SVF10N60CF

SVF10N60CFJ

SVF10N60CFJD

SVF10N60CT

SVF10N60F

SVF10N60FG

SVF10N60K

SVF10N60S

SVF10N60STR

SVF10N60T

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