SVF4N90F datasheet, mosfet equivalent, Silan Microelectronics

Features and benefits

* 4A,900V,RDS(on)(typ.)=2.7@VGS=10V
* Low gate charge
* Low Crss
* Fast switching
* Improved dv/dt capability ORDERING INFORMATION Part No. SVF4N90F.

Description

SVF4N90F/MJ/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minim.

Image gallery