SVF4N150PF datasheet, mosfet equivalent, SILAN MICROELECTRONICS

Features and benefits

* 4A, 1500V, RDS(on)(typ)=5.0@VGS=10V
* Low gate charge
* Low Crss
* Fast switching
* Improved dv/dt capability 2 1 3 12 3 TO-220F-3L 1. Gate 2. Dra.

Description

SVF4N150PF(P7)(F) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to min.

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