SVF4N60CAMN datasheet, mosfet equivalent, SILAN MICROELECTRONICS

Features and benefits

13 1 TO-252-2L 1.Gate 3 2.Drain 3.Source 123 TO-251N-3L 1 23 TO-262-3L 1 2 3 TO-220F-3L
* 4A, 600V, RDS(on)(typ.)=2.0@VGS=10V
* Low gate charge
* Low C.

Description

2 SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailor.

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