* 4A,800V, RDS(on)(typ.)=3.3@VGS=10V
* Low gate charge
* Low Crss
* Fast switching
* Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Pa.

SVF4N80F/D/MJ/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minim.

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