∗ 1A,600V,RDS(on)（typ.）=8.2Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF1N60M SVF1N.

SVFM/MJ/N/B/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially .

SVF1N60ABTR

SVF1N60AD

SVF1N60ADTR

SVF1N60AF

SVF1N60AH

SVF1N60AM

SVF1N60AMJ

SVF1N60B

SVF1N60F

SVF1N60H

SVF1N60M

SVF1N60MJ

SVF1N60N

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