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SVF1N60AD - 600V N-CHANNEL MOSFET

Download the SVF1N60AD datasheet PDF. This datasheet also covers the SVF1N60AM variant, as both devices belong to the same 600v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

SVF1N60AM/MJ/B/D/F/H is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

Features

  • ∗ ∗ ∗ ∗ ∗ 1A,600V,RDS(on)(typ. )=6.8Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVF1N60AM-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVF1N60AD
Manufacturer Silan Microelectronics
File Size 469.44 KB
Description 600V N-CHANNEL MOSFET
Datasheet download datasheet SVF1N60AD Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SVF1N60AM/MJ/B/D/F/H_Datasheet 1A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF1N60AM/MJ/B/D/F/H is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ ∗ ∗ ∗ ∗ 1A,600V,RDS(on)(typ.)=6.8Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
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