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SVF12N65RFJH - 650V N-CHANNEL MOSFET

Download the SVF12N65RFJH datasheet PDF. This datasheet also covers the SVF12N65RF variant, as both devices belong to the same 650v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The SVF12N65RF(FJH) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

Features

  • 12A, 650V, RDS(on)(typ. )= 0.64@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.Source 1 23 1 23 TO-220FJH-3L TO-220F-3L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVF12N65RF-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVF12N65RFJH
Manufacturer Silan Microelectronics
File Size 285.88 KB
Description 650V N-CHANNEL MOSFET
Datasheet download datasheet SVF12N65RFJH Datasheet

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Other Datasheets by Silan Microelectronics

Part Number Description
SVF12N65RF 650V N-CHANNEL MOSFET
SVF12N65CFJ 650V N-CHANNEL MOSFET
SVF12N65F 650V N-CHANNEL MOSFET
SVF12N65T 650V N-CHANNEL MOSFET
SVF12N60CF 600V N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVF12N65RF(FJH)_Datasheet 12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION The SVF12N65RF(FJH) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  12A, 650V, RDS(on)(typ.)= 0.64@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.
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