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SVF12N65RF - 650V N-CHANNEL MOSFET

Description

The SVF12N65RF(FJH) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

Features

  • 12A, 650V, RDS(on)(typ. )= 0.64@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.Source 1 23 1 23 TO-220FJH-3L TO-220F-3L.

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Datasheet Details

Part number SVF12N65RF
Manufacturer Silan Microelectronics
File Size 285.88 KB
Description 650V N-CHANNEL MOSFET
Datasheet download datasheet SVF12N65RF Datasheet

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Full PDF Text Transcription

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Silan Microelectronics SVF12N65RF(FJH)_Datasheet 12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION The SVF12N65RF(FJH) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  12A, 650V, RDS(on)(typ.)= 0.64@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.
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