SVD9Z24NT Description
SVD9Z24NT is a P-channel enhancement mode power MOS field effect transistor which is produced using Silan planar VDMOS process. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. This device is widely used in push-pull amplifier, high-side switching circuit,...
SVD9Z24NT Key Features
- 12A, -55V ,RDS(on)(typ.)<175m@VGS=-10V
- P channel
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability