∗ 8A,800V,RDS(on)（typ）=1.3Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING SPECIFICATIONS Part No. SVD8N80T SVD.

SVD8N80T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailo.

SVD8N80T

SVD8N60F

SVD8N60T

SVD830D

SVD830DTR

SVD830F

SVD830T

SVD840F

SVD840T

SVD101

SVD102

SVD1055SA

SVD10N60F

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