SVD830DTR mosfet equivalent, 500v n-channel mosfet.
∗ 4.5A,500V,RDS(on(typ)=1.3Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability
ORDERING SPECIFICATIONS
Part No. SVD830T SVD830F SVD830D .
SVD830T/F/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tail.
Image gallery
TAGS
Download (Size : 678.67KB)