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SVD5N60F, SVD5N60T Datasheet - Silan Microelectronics

SVD5N60F 600V N-CHANNEL MOSFET

SVD5N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide su.

SVD5N60F Features

* ∗ 5A,600V,RDS(on)（typ）=1.7Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING SPECIFICATIONS Part No. SVD5N60T SVD5N60F Package TO-220-3L TO-220F-3L Marking SVD5N60T SVD5N60F Material Pb free Pb free Packing Tube Tube HANGZHOU SILAN MICROELECT

SVD5N60T-SilanMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: SVD5N60F, SVD5N60T. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

SVD5N60F, SVD5N60T

Manufacturer:

Silan Microelectronics

File Size:

613.57 KB

Description:

600v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: SVD5N60F, SVD5N60T.
Please refer to the document for exact specifications by model.

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SVD5N60F SVD5N60T 600V N-CHANNEL MOSFET Silan Microelectronics

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