SVD50N06MJ mosfet equivalent, mosfet.
∗ 50A,60V,RDS(on)(typ)=18mΩ@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability
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ORDERING INFORMATION
Part No. SVD50N06T SVD50.
SVD50N06T is an N-channel enhancement mode high voltage MOS field effect transistor which is produced using Silan new structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to mi.
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