SVD10N60F mosfet equivalent, 600v n-channel mosfet.
∗ 10A,600V,RDS(on)(typ.)=0.78Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability
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ORDERING SPECIFICATIONS
Part No. SVD10N60T.
SVD10N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin
TM
structure DMOS technology. The improved planar stripe
cell and the improved guard ring terminal have been especially t.
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