SVD10N65FG mosfet equivalent, 650v n-channel mosfet.
∗ 10A,650V,RDS(on)(typ.)=0.84Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No. SVD10N65T SV.
SVD10N65T/F(G) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin
TM
structure VDMOS technology. The improved
planar stripe cell and the improved guard ring terminal have been especial.
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