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SVD10N65FG - 650V N-CHANNEL MOSFET

Download the SVD10N65FG datasheet PDF. This datasheet also covers the SVD10N65T variant, as both devices belong to the same 650v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

structure VDMOS technology.

Features

  • ∗ 10A,650V,RDS(on)(typ. )=0.84Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVD10N65T-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVD10N65FG
Manufacturer Silan Microelectronics
File Size 660.21 KB
Description 650V N-CHANNEL MOSFET
Datasheet download datasheet SVD10N65FG Datasheet

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Other Datasheets by Silan Microelectronics

Part Number Description
SVD10N65F 650V N-CHANNEL MOSFET
SVD10N65T 650V N-CHANNEL MOSFET
SVD10N60F 600V N-CHANNEL MOSFET
SVD10N60T 600V N-CHANNEL MOSFET
SVD1055SA 55V N/P-CHANNEL MOSFET

Full PDF Text Transcription

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SVD10N65T/F(G)_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD10N65T/F(G) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES ∗ 10A,650V,RDS(on)(typ.)=0.84Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
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