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SPD23N05 - SIPMOS Power Transistor

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SPD23N05 SPU23N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V 55 V ID 22 A 22 A RDS(on) 0.06 Ω 0.06 Ω Package Ordering Code SPD23N05 SPU23N05 P-TO252 P-TO251 Q67040 - S4138 - A2 Q67040 - S4131 - A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 °C TC = 100 °C ID A 22 16 Pulsed drain current TC = 25 °C IDpuls 88 EAS Avalanche energy, single pulse ID = 22 A, V DD = 25 V, RGS = 25 Ω L = 372 µH, Tj = 25 °C mJ 90 IAR EAR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 22 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C 22 5.
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