Datasheet4U Logo Datasheet4U.com

SPD14N05 - SIPMOS Power Transistor

📥 Download Datasheet

Full PDF Text Transcription for SPD14N05 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SPD14N05. For precise diagrams, and layout, please refer to the original PDF.

SPD14N05 SPU14N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature Pin 1 Pin 2 Pin 3 G D S Type VDS...

View more extracted text
t rated • 175°C operating temperature Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V 55 V ID 13.5 A 13.5 A RDS(on) 0.1 Ω 0.1 Ω Package Ordering Code SPD14N05 SPU14N05 P-TO252 P-TO251 Q67040 - S4123 - A2 Q67040 - S4115 - A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 °C TC = 100 °C ID A 13.5 9.6 Pulsed drain current TC = 25 °C IDpuls 54 EAS Avalanche energy, single pulse ID = 13.5 A, VDD = 25 V, RGS = 25 Ω L = 571 µH, Tj = 25 °C mJ 52 IAR EAR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 13.5 A, V DS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C 13