Q62702-C2445 Datasheet | Siemens Semiconductor Group

BCR 512 NPN Silicon Digital Transistor - Switching circuit, inverter, interface circuit, drive circuit - Built in bias resistor (R1=4.7kΩ, R2=4.7kΩ) Type BCR 512 Marking Ordering Code XFs Q62702-C2445 Pin Configuration 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 79 °C Junction temperature Storage temperature Symbol Values 50 50 10 30 500 330 150 - 65 ... + 150 m A m W °C Unit V VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Thermal Resistance Junction ambient 1) Rth JA Rth JS ≤ 325 ≤ 215 K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu Semiconductor Group Nov-27-1996 BCR 512 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 50 4.7 1 - V IC = 100 µA, IB = 0 Collector-base breakdown voltage V(BR)CBO IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 n A m A 1.61 60 m V 0.3 V 0.6 1.5 2.2 6.2 1.1 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO h FE VCEsat Vi(off) Vi(on) VEB = 10 V, IC =...