The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
BCR 148S
NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvaniv) internal isolated Transistors driver circuit • Built in bias resistor (R1=47kΩ, R2=47KΩ)
Type BCR 148S
Marking Ordering Code Pin Configuration WEs
Package
Q62702-C2417 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 115°C Junction temperature Storage temperature Symbol Values 50 50 10 50 70 250 150 - 65 ... + 140 mA mW °C Unit V
VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg
Thermal Resistance Junction ambient
1)
RthJA RthJS
≤ 275 ≤ 140
K/W
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.
Q62702-C2417 Datasheet
