HYM368025GS-60 Datasheet - Siemens

HYM368025GS-60 8M x 36-Bit EDO - DRAM Module

EDO-DRAM Module (access time 50 ns) EDO-DRAM Module (access time 60 ns) EDO-DRAM Module (access time 50 ns) EDO-DRAM Module (access time 60 ns) Semiconductor Group 2 HYM 368025S/GS-50/-60 8M × 36-Bit EDO-Module Pin Configuration Pin Names VSS 1 DQ0 2 DQ18 3 DQ1 4 DQ19 5 DQ2 6 DQ20 7 DQ3 8 DQ21 .

8M x 36-Bit EDO - DRAM Module HYM 368025S/GS-50/-60 SIMM modules with 8 388 608 words by 36-bit organization in two banks for PC main memory applications Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version) 60 ns access time 104 ns cycle time (-60 version) Hyper Page Mode (EDO) capability 20 ns cycle time (-50 version) 25 ns cycle time (-60 version) Single + 5 V (± 10 %) supply Low power dissipation max. 6820 mW active (-50 version) max. 6160 mW active (-60 ve.

HYM368025GS-60 Features

* sh cycle, before proper device operation is achieved.

HYM368025GS-60 Datasheet (104.33 KB)