Datasheet4U Logo Datasheet4U.com

HYM368025S - 8M x 36-Bit EDO - DRAM Module

General Description

EDO-DRAM Module (access time 50 ns) EDO-DRAM Module (access time 60 ns) EDO-DRAM Module (access time 50 ns) EDO-DRAM Module (access time 60 ns) Semiconductor Group 2 HYM 368025S/GS-50/-60 8M × 36-Bit EDO-Module Pin Configuration Pin Names VSS 1 DQ0 2 DQ18 3 DQ1 4 DQ19 5 DQ2 6 DQ20 7 DQ3 8 DQ21

Key Features

  • sh cycle, before proper device operation is achieved.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HYM-104XA Open Frame Monitor Hy-Line
HYM1302 High Performance Low Power RAM Real-Time Clock Chip ETC
HYM1302 Serial Real Time Clock/Calendar Haoyu
HYM1380 HYM1380 / HYM1381 ETC
HYM1381 HYM1380 / HYM1381 ETC

Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
HYM368025GS-50 8M x 36-Bit EDO - DRAM Module
HYM368025GS-60 8M x 36-Bit EDO - DRAM Module
HYM368020GS-60 8M x 36-Bit Dynamic RAM Module
HYM368020S 8M x 36-Bit Dynamic RAM Module
HYM368035GS-60 8M x 36-Bit EDO-DRAM Module

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
8M x 36-Bit EDO - DRAM Module HYM 368025S/GS-50/-60 • SIMM modules with 8 388 608 words by 36-bit organization in two banks for PC main memory applications Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version) 60 ns access time 104 ns cycle time (-60 version) Hyper Page Mode (EDO) capability 20 ns cycle time (-50 version) 25 ns cycle time (-60 version) Single + 5 V (± 10 %) supply Low power dissipation max. 6820 mW active (-50 version) max. 6160 mW active (-60 version) CMOS – 132 mW standby TTL –264 mW standby CAS-before-RAS refresh RAS-only-refresh Hidden-refresh Decoupling capacitors mounted on substrate All inputs, outputs and clocks fully TTL compatible 72 pin Single in-Line Memory Module (L-SIM-72-14) with 31.