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HYB5118165BSJ-50 - 1M x 16-Bit Dynamic RAM 1k Refresh

Description

5V 5V 50 ns EDO-DRAM 60 ns EDO-DRAM 3.3 V 50 ns EDO-DRAM 3.3 V 60 ns EDO-DRAM 5V 5V 50 ns EDO-DRAM 60 ns EDO-DRAM HYB 5118165BST-50 on request HYB 5118165BST-60 on request HYB 3118165BST-50 on request HYB 3118165BST-60 on request 3.3 V 50 ns EDO-DRAM 3.3 V 60 ns EDO-DRAM Semiconductor Group 2

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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
HYB5118165BSJ-60 1M x 16-Bit Dynamic RAM 1k Refresh
HYB5118165BST-50 1M x 16-Bit Dynamic RAM 1k Refresh
HYB5118165BST-60 1M x 16-Bit Dynamic RAM 1k Refresh
HYB5118165BJ-50 1M x 16-Bit Dynamic RAM 1k & 4k Refresh
HYB5118165BJ-60 1M x 16-Bit Dynamic RAM 1k & 4k Refresh

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1M × 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO) Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance: -50 -60 60 15 30 HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 tRAC RAS access time tCAC CAS access time tAA tRC Access time from address Read/Write cycle time 50 13 25 84 20 ns ns ns ns ns 104 25 tHPC Hyper page mode (EDO) cycle time • Power Dissipation, Refresh & Addressing: HYB5118165 -50 Power Supply Addressing Refresh Active TTL Standby CMOS Standby 715 11 5.5 10/10 632 -60 5 V ± 10 % HYB3118165 -50 10/10 468 7.2 3.6 414 mW mW mW -60 3.3 V ± 0.