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Sharp Electronic Components Datasheet

PT493F Datasheet

Intermediate Acceptance High Sensitivity Phototransistor

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PT491/PT491F
PT493/PT493F
s Features
1. Epoxy resin package
2. Compact
3. Intermediate acceptance (∆θ : TYP. ± 40˚ )
4. Long lead pin type : PT493/PT493F
5. Visible light cut-off type : PT491F / PT493F
s Applications
1. VCRs
2. Optoelectronic switches
PT491/PT491F/PT493/PT493F
Intermediate Acceptance High
Sensitivity Phototransistor
s Outline Dimensions
PT491/PT491F
( Unit : mm)
2C - 0.5 3.0± 0.2
φ 2.5
1.7
1.15
0.75
g Epoxy
resin
2.54
12
2 - 0.4
2 - 0.45
2 - 0.8
2
2.8
g Epoxy resin
PT491
Transparent light blue
resin
PT491F
Visible light cut-off
resin (black )
PT493/PT493F
1
1 Emitter
2 Collector
2C - 0.5 3.0±0.2
φ 2.5
1.7
1.15
0.75
g Epoxy
resin
5
s Absolute Maximum Ratings ( Ta = 25˚C)
Parameter
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
*1Soldering temperature
Symbol
V CEO
V ECO
IC
PC
T opr
T stg
T sol
Rating
35
6
50
75
- 25 to + 85
- 40 to + 85
260
Unit
V
V
mA
mW
˚C
˚C
˚C
*1 For 3 seconds at the position of 1.4mm from the
surface of resin edge
2.54
12
2 - 0.4
2 - 0.45
2 - 0.8
2
2.8
g Epoxy resin
PT493
Transparent light blue
resin
PT493F
Visible light cut-off
resin (black )
1
1 Emitter
2 Collector
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.


Sharp Electronic Components Datasheet

PT493F Datasheet

Intermediate Acceptance High Sensitivity Phototransistor

No Preview Available !

s Electro-optical Characteristics
Parameter
*2Collector current
PT491/PT493
PT491F/PT493F
Collector dark current
*2Collector-emitter saturation voltage
Peak sensitivity
wavelength
Response time
Half intensity angle
PT491/PT493
PT491F/PT493F
Rise time
Fall time
Symbol
Conditions
VCE = 2V
IC
EV = 2lx
I CEO
V CE(sat)
VCE = 10V, E e = 0
IC = 0.8mA,
Ee = 1mW/cm2
λp -
t r VCE = 2V, I C = 5mA
tf RL = 100
∆θ -
*2 E e , E V : Illuminance, irradiance by CIE standard light source A ( tungsten lamp)
PT491/PT491F/PT493/PT493F
MIN.
0.3
0.2
-
-
-
-
-
-
TYP.
0.6
0.4
-
-
800
860
80
70
± 40
( Ta = 25˚C)
MAX.
1.3
0.8
10- 6
Unit
mA
mA
A
1.0 V
- nm
- nm
400 µ s
350
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
80
70
60
50
40
30
20
10
0
- 25 0
25 50 75 85 100
Ambient temperature T a (˚C)
Fig. 3 Relative Collector Current vs.
Ambient Temperature
175
VCE = 2V
EV = 21x
150
125
100
75
50
- 25
0 25 50 75
Ambient temperature Ta (˚C)
100
Fig. 2 Collector Dark Current vs.
Ambient Temperature
10 - 4
5 VCE
10 - 5 = 10V
5
10 - 6
5
10 - 7
5
10 - 8
5
10 - 9
5
10 - 10
5
10 - 11
5
- 25
0 25 50 75
Ambient temperature T a (˚C)
100
Fig. 4 Collector Current vs. Irradiance
50
VCE = 2V
T a = 25˚C
20
PT491
PT493
10
5
PT491F
PT493F
2
1
2 5 10-1 2 5 1
Irradiance E e ( mW/cm2)


Part Number PT493F
Description Intermediate Acceptance High Sensitivity Phototransistor
Maker Sharp Electrionic Components
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PT493F Datasheet PDF






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