Datasheet Summary
Dual N-Channel Enhancement Mode
30V Dual N-Channel Enhancement Mode MOSFET
- DESCRIPTION
- FEATURE
The STN4842 is the Dual N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM and gate charge for most of the synchronous buck converter applications.
- 30V / 7.8A, RDS(ON) =16mΩ(typ.)@VGS =10V
- 30V / 5.8A, RDS(ON) =24mΩ(typ.)@VGS =4.5V
- Super high density cell design for extremely low
RDS(ON)
- Exceptional on-resistance and Maximum DC current capability
STN4842M-TRG ROHS pliant This is Halogen Free
- APPLICATIONS
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