SKIIP30NAB06 Datasheet | Semikron Danfoss

.. SKii P 31 NAB 06 Absolute Maximum Ratings Symbol Inverter VCES VGES IC ICM IF = - IC IFM = - ICM Conditions 1) Values 600 ± 20 50 / 35 100 / 70 57 / 38 114 / 76 800 25 370 680 - 40 . . . + 150 - 40 . . . + 125 2500 Units V V A A A A V A A A2s °C °C V Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Mini SKii P 3 SEMIKRON integrated intelligent Power SKii P 31 NAB 06 3-phase bridge rectifier + braking chopper + 3-phase bridge inverter Case M3 Bridge Rectifier VRRM ID Theatsink = 80 °C tp = 10 ms; sin. 180 °, Tj = 25 °C IFSM I2t tp = 10 ms; sin. 180 °, Tj = 25 °C Tj Tstg Visol AC, 1 min. Characteristics Symbol Conditions 1) IGBT - Inverter VCEsat IC = 50 A Tj = 25 (125) °C VCC = 300 V; VGE = ± 15 V td(on) tr IC = 50 A; Tj = 125 °C Rgon = Rgoff = 22 Ω td(off) tf inductive load Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz per IGBT Rthjh IGBT - Chopper - VCEsat IC = 30 A Tj = 25 (125) °C VCC = 300 V; VGE = ± 15 V td(on) tr IC = 30 A; Tj = 125 °C Rgon = Rgoff = 33 Ω td(off) tf inductive load Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz per IGBT Rthjh Diode 2) - Inverter & Chopper VF = VEC IF = 50 A Tj = 25 (125) °C VTO Tj = 125 °C r T Tj = 125 °C IF = 50 A, VR = - 300 V IRRM di F/dt = - 800 A/µs Qrr Eoff VGE = 0 V, Tj = 125 °C per diode Rthjh Diode - Rectifier VF IF = 25 A, Tj = 25 °C per diode Rthjh Temperature Sensor RTS T = 25 / 100 °C Mechanical Data M1 case to heatsink, SI Units Case mechanical outline see page B 16 - 9 2 min. - - - - - - - - - - - - - - - - - - - - - - - - - typ. max. Units V 2,1(2,2) 2,7(2,8) ns 120 60 ns 160 80 ns 500 330 ns 830 550 m J - 7,3 n F - 2,8 K/W 1,0 - V 2,1(2,2) 2,7(2,8) ns 100 50 ns 160 80 ns 370 250 ns 750 500 m J - 4,0 n F - 1,6 K/W 1,4 - V 1,45(1,4) 1,7(1,7) V 0,9 0,85 mΩ 16...