SFP840 mosfet equivalent, n-channel mosfet.
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High ruggedness RDS(on) (Max 0.85 Ω )@VGS=10V Gate Charge (Typical 48nC) Improved dv/dt Capability, High ruggedness 100% Avalanche Tested Maximum Junction Te.
This Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well .
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