Datasheet4U Logo Datasheet4U.com

HRP30N04K - N-Channel MOSFET

Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 200 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 2.5 mΩ (Typ. ) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 40 V RDS(on) typ = 2.5mΩ ID = 230 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Curren.

📥 Download Datasheet

Datasheet Details

Part number HRP30N04K
Manufacturer SemiHow
File Size 832.81 KB
Description N-Channel MOSFET
Datasheet download datasheet HRP30N04K Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HRP32 Silicon Schottky Barrier Diode for Rectifying Hitachi Semiconductor
HRP01 Relative Pressure Sensor HOPERF
HRP160306-CSC3 SMD Type Red Emitter CT Micro
HRP22 Silicon Schottky Barrier Diode for Rectifying Hitachi Semiconductor
HRP2540 Power Rectifier/Power Surge Suppressor Intersil Corporation

Other Datasheets by SemiHow

Part Number Description
HRP30N10C 100V N-Channel SGT MOSFET
HRP33N04K N-Channel MOSFET
HRP35N04K N-Channel MOSFET
HRP35N06K N-Channel MOSFET
HRP370N10K N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HRP30N04K HRP30N04K 40V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 200 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.5 mΩ (Typ.) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 40 V RDS(on) typ = 2.5mΩ ID = 230 A TO-220 1 2 3 1.Gate 2. Drain 3.
Published: |