HRP30N10C
Features
- SGT LV MOSFET technology
- Excellent Qg- Ron product (FOM)
- Extremely low on-resistance (Ron)
Key Parameters
Parameter BVDSS ID
RDS(on), max
Value 100 180 3.0
Unit V A mΩ
Application
- Power management
- Motor drive and control
- UPS
Package & Internal Circuit
TO-220
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
VDSS
IDM VGS EAS PD TJ, TSTG
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25℃)
- Continuous (TC = 100℃)
Drain Current
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Power Dissipation (TC = 25℃)
Operating and Storage Temperature Range
Value 100 180 135 720 ± 20 784 250
-55 to +150
Unit V A A A V m J W ℃
Thermal Resistance Characteristics
Symbol
Parameter...
