HRP30N10C - 100V N-Channel SGT MOSFET

Datasheet Summary

Features

SGT LV MOSFET technology.
Excellent Qg.
Ron product (FOM).
Extremely low on-resistance (Ron) Key Parameters Parameter BVDSS ID RDS(on), max Value 100 180 3.0 Unit V A mΩ.

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Datasheet Details

Part number	HRP30N10C
Manufacturer	SemiHow
File Size	841.06 KB
Description	100V N-Channel SGT MOSFET
Datasheet	HRP30N10C Datasheet
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HRP30N10C Aug 2023 HRP30N10C 100V N-Channel SGT MOSFET Features ▪ SGT LV MOSFET technology ▪ Excellent Qg*Ron product (FOM) ▪ Extremely low on-resistance (Ron) Key Parameters Parameter BVDSS ID RDS(on), max Value 100 180 3.

Published: Jul 19, 2025 |