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HRLP33N03K
Sep 2018
HRLP33N03K
30V N-Channel Trench MOSFET
Features
Low Dense Cell Design, Logic Level Reliable and Rugged Advanced Trench Process Technology 100% UIS Tested, 100% Rg Tested
Application
Power Management in Inverter System Synchronous Rectification
Key Parameters
Parameter BVDSS
ID (Silicon Limited) RDS(on), typ @10V RDS(on), typ @4.5V
Value 30 150 2.7 3.