Datasheet4U Logo Datasheet4U.com

HRLP150N10K - N-Channel Trench MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 80 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 13 Pȍ (Typ. ) @VGS=10V ‰ Lower RDS(ON) : 14 Pȍ (Typ. ) @VGS=4.5V ‰ 100% Avalanche Tested Mar 2016 BVDSS = 100 V RDS(on) typ = 13 Pȍ ID = 70 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Vo.

📥 Download Datasheet

Datasheet preview – HRLP150N10K

Datasheet Details

Part number HRLP150N10K
Manufacturer SemiHow
File Size 211.63 KB
Description N-Channel Trench MOSFET
Datasheet download datasheet HRLP150N10K Datasheet
Additional preview pages of the HRLP150N10K datasheet.
Other Datasheets by SemiHow

Full PDF Text Transcription

Click to expand full text
HRLP150N10K HRLP150N10K 100V N-Channel Trench MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 80 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 13 Pȍ (Typ.) @VGS=10V ‰ Lower RDS(ON) : 14 Pȍ (Typ.) @VGS=4.5V ‰ 100% Avalanche Tested Mar 2016 BVDSS = 100 V RDS(on) typ = 13 Pȍ ID = 70 A TO-220 1 23 1.Gate 2. Drain 3.
Published: |