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HFS13N65U - N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 60.0 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.4 ȍ 7S #9GS=10V ‰ 100% Avalanche Tested March 2013 BVDSS = 650 V RDS(on) typ = 0.4 ȍ ID = 14.0 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM V.

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Datasheet Details

Part number HFS13N65U
Manufacturer SemiHow
File Size 186.56 KB
Description N-Channel MOSFET
Datasheet download datasheet HFS13N65U Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HFS13N65U HFS13N65U 650V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 60.0 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.4 ȍ 7S #9GS=10V ‰ 100% Avalanche Tested March 2013 BVDSS = 650 V RDS(on) typ = 0.4 ȍ ID = 14.0 A TO-220F 12 3 1.Gate 2. Drain 3.
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