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HFP6N60U - N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 16.0 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested July 2012 BVDSS = 600 V RDS(on) typ ȍ ID = 6.0 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM V.

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Datasheet Details

Part number HFP6N60U
Manufacturer SemiHow
File Size 199.66 KB
Description N-Channel MOSFET
Datasheet download datasheet HFP6N60U Datasheet

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Full PDF Text Transcription (Reference)

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HFP6N60U HFP6N60U 600V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 16.0 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested July 2012 BVDSS = 600 V RDS(on) typ ȍ ID = 6.0 A TO-220 1 23 1.Gate 2. Drain 3.
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