ZVN2106B mosfet equivalent, n-channel enhancement mode mosfet.
2.54 (0.100)
5.08 (0.200) typ.
2 1
0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034)
3
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Faster switching Low Ciss Integral Source-Drain Diod.
where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. High R.
45°
TO-39 PACKAGE (TO-205AD)
(Underside View) PIN 1
– SOURCE PIN 3
– DRAIN CASE
– DRAIN PIN 2
– GATE
This enhancement-mode (normally-off) vertical DMOS FET is ideally suited to a wide .
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