D2008UK fet equivalent, metal gate rf silicon fet.
* SIMPLIFIED AMPLIFIER DESIGN
* SUITABLE FOR BROAD BAND
APPLICATIONS
* LOW Crss
* SIMPLE BIAS CIRCUITS
* LOW NOISE
* HIGH GAIN
– 1.
* LOW Crss
* SIMPLE BIAS CIRCUITS
* LOW NOISE
* HIGH GAIN
– 13 dB MINIMUM
45˚
TO-39 PA.
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