D2006UK fet equivalent, metal gate rf silicon fet.
* SIMPLIFIED AMPLIFIER DESIGN
* SUITABLE FOR BROAD BAND APPLICATIONS
* VERY LOW Crss
* SIMPLE BIAS CIRCUITS
* LOW NOISE
* HIGH GAIN
&nbs.
* VERY LOW Crss
* SIMPLE BIAS CIRCUITS
* LOW NOISE
* HIGH GAIN
– 13 dB MINIMUM
APPLICATI.
Image gallery