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STT2602 Datasheet, SeCoS Halbleitertechnologie GmbH

STT2602 mosfet equivalent, n-channel enhancement mode power mosfet.

STT2602 Avg. rating / M : 1.0 rating-12

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STT2602 Datasheet

Features and benefits

* Low On-Resistance * Capable of 2.5V Gate Drive D D 5 S 4 6 D REF. A A1 A2 c D E E1 Date Code 2602 G 1 D 2 D 3 G S Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00.

Application

Features * Low On-Resistance * Capable of 2.5V Gate Drive D D 5 S 4 6 D REF. A A1 A2 c D E E1 Date Code 2602 G 1 .

Description

The STT2602 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The STT2602 is universally used for all commercial-industrial applications. Features * Low On-Resista.

Image gallery

STT2602 Page 1 STT2602 Page 2 STT2602 Page 3

TAGS

STT2602
N-Channel
Enhancement
Mode
Power
MosFET
SeCoS Halbleitertechnologie GmbH

Manufacturer


SeCoS Halbleitertechnologie GmbH

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