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STT2603 - P-Channel Enhancement Mode Power MosFET

Description

possible on-resistance, extremely efficient and cost-effectiveness device.

The STT2603 is universally used for all commercial industrial surface mount application .

Features

  • Small package outline.
  • Simple drive requirement D D 6 D 5 S 4 REF. A A1 A2 c D E E1 G Date Code 1 D 2603 2 D 3 G S Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage www. DataSheet4U. com Continuous Drain Current (Note 3) Continuous Drain Current (Note 3) Pulsed Drain C.

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Datasheet Details

Part number STT2603
Manufacturer SeCoS Halbleitertechnologie GmbH
File Size 525.85 KB
Description P-Channel Enhancement Mode Power MosFET
Datasheet download datasheet STT2603 Datasheet

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Other Datasheets by SeCoS Halbleitertechnologie GmbH

Part Number Description
STT2602 N-Channel Enhancement Mode Power MosFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STT2603 Elektronische Bauelemente RoHS Compliant Product -5A, -20V,RDS(ON) 65m £[ P-Channel Enhancement Mode Power Mos.FET Description The STT2603 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The STT2603 is universally used for all commercial industrial surface mount application . Features * Small package outline * Simple drive requirement D D 6 D 5 S 4 REF. A A1 A2 c D E E1 G Date Code 1 D 2603 2 D 3 G S Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage www.DataSheet4U.
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