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SSQ73N10SG - N-Channel Enhancement Mode Power MOSFET

Description

The SSQ73N10SG is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

The SSQ73N10SG meet the RoHS and Green Product with Function reliability approved.

Features

  • RDS(on)≦11mΩ @VGS=10V RDS(on)≦14mΩ @VGS=4.5V High speed power switching, Logic Level Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested TO-220 Package.

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Datasheet Details

Part number SSQ73N10SG
Manufacturer SeCoS
File Size 393.15 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet SSQ73N10SG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SSQ73 10SG 73A, 100V, RDS(O ) 11mΩ -Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSQ73N10SG is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSQ73N10SG meet the RoHS and Green Product with Function reliability approved. TO-220 FEATURES RDS(on)≦11mΩ @VGS=10V RDS(on)≦14mΩ @VGS=4.
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