Datasheet4U Logo Datasheet4U.com

SSQ04N65J - N-Channel MOSFET

General Description

This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain-to-source diode with fast recovery time.

Key Features

  • High current rating Low RDS(ON) Lower capacitance Lower total gate charge Tighter VSD specifications Specified avalanche energy REF. A B C D E F G H Millimeter Min. Max. 10.010 10.350 3.735 3.935 2.590 2.890 12.060 12.460 1.170 1.370 0.710 0.910 13.400 13.800 2.540 TYP. REF. I J K L M N Q Millimeter Min. Max. 4.980 5.180 3.560 3.960 4.470 4.670 1.200 1.400 8.500 8.900 2.520 2.820 0.330 0.650 D 2 1 G 3 S.

📥 Download Datasheet

Other Datasheets by SeCoS Halbleitertechnologie GmbH

Part Number Description
SSQ07N60J N-Channel MOSFET
SSQ105N60SG N-Channel MOSFET
SSQ182N45SG N-Ch Enhancement Mode Power MOSFET
SSQ73N10SG N-Channel Enhancement Mode Power MOSFET
SSQ85N80SG N-Channel Enhancement Mode Power MOSFET
SSQF02N60J N-Channel MOSFET
SSQF07N65J N-Ch Enhancement Mode Power MOSFET
SSQF09N60H-C N-Ch Super Junction Power MOSFET
SSQF10N60H-C N-Channel Super Junction Power MOSFET
SSQF11N20-C N-Ch Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Elektronische Bauelemente SSQ04N65J 4A, 650V, RDS(ON) 3 Ω N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. It is designed for high voltage, high speed switching applications such as power supplies, converters, power motor control and bridge circuits. TO-220J FEATURES High current rating Low RDS(ON) Lower capacitance Lower total gate charge Tighter VSD specifications Specified avalanche energy REF. A B C D E F G H Millimeter Min. Max. 10.010 10.350 3.735 3.935 2.590 2.890 12.060 12.460 1.170 1.370 0.710 0.910 13.