SSQ105N60SG mosfet equivalent, n-channel mosfet.
RDS(on)≦5.3mΩ @VGS=10V RDS(on)≦7.5mΩ @VGS=4.5V High speed power switching, Logic Level Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested,.
The SSQ105N60SG meet the RoHS and Green Product with Function reliability approved.
TO-220
FEATURES
RDS(on)≦5.3mΩ @VG.
The SSQ105N60SG is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSQ105N60SG meet the RoHS and Green Product w.
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