SSG4957 mosfet equivalent, p-channel enhancement mode power mosfet.
* Low on-resistance * Simple drive requirement * Dual P MOSFET Package
D1 D1 D2 D2 8 765
Date Code
4957SS
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate.
The SSG4957 provide the designer with the best Combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
Features
* Low on-resistance * Simple drive requirement * Dual P MOSFET Package
D1 D1 D2 D2 8 76.
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