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SSG4953 - Dual-P Enhancement Mode Power MOSFET

General Description

The SSG4953 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5V.

The device is suitable for use as a load switch or in PWM applications.

Key Features

  • Simple Drive Requirement.
  • Lower On-resistance.
  • Low Gate Charge.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SSG4953 -6 A, -30 V, RDS(ON) 45 m Dual-P Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG4953 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5V. The device is suitable for use as a load switch or in PWM applications. It may be used in a common drain arrangement to from a bidirectional blocking switch. FEATURES  Simple Drive Requirement  Lower On-resistance  Low Gate Charge MARKING 4953SS    = Date Code PACKAGE INFORMATION Package MPQ SOP-8 3K Leader Size 13’ inch SOP-8 B A HG LD M C JK F N E REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.