Datasheet4U Logo Datasheet4U.com

SSG4957 - P-Channel Enhancement Mode Power MosFET

Datasheet Summary

Description

The SSG4957 provide the designer with the best Combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

Features

  • Low on-resistance.
  • Simple drive requirement.
  • Dual P MOSFET Package D1 D1 D2 D2 8 765 Date Code 4957SS Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range 123 4 S1 G1 S2 G2 Symbol VDS VGS ID@TA=25oC ID@TA=70oC IDM PD@TA=25oC Tj, Tstg SOP-8 0.40 0.90 6.20 5.80 0.25 0.19 0.25 o 45 0.

📥 Download Datasheet

Datasheet preview – SSG4957

Datasheet Details

Part number SSG4957
Manufacturer SeCoS
File Size 428.29 KB
Description P-Channel Enhancement Mode Power MosFET
Datasheet download datasheet SSG4957 Datasheet
Additional preview pages of the SSG4957 datasheet.

📁 Similar Datasheet

  • SSG4228 - 30V Dual N-Channel MOSFET (VBsemi)
  • SSG42N60 - 50A 600V FAST POWER IGBT (Solid States Devices)
  • SSG4394N - N-Channel Enhancement Mode Power MOSFET (SeCoS Halbleitertechnologie)
  • SSG4396N - N-Channel MOSFET (SeCoS Halbleitertechnologie)
  • SSG4510 - N & P-Ch Enhancement Mode Power MOSFET (SeCoS Halbleitertechnologie)
  • SSG4530C - N & P-Ch Enhancement Mode Power MOSFET (SeCoS Halbleitertechnologie)
  • SSG4536C - N & P-Ch Enhancement Mode Power MOSFET (SeCoS Halbleitertechnologie)
  • SSG4565 - Enhancement Mode Power MOSFET (SeCoS Halbleitertechnologie GmbH)
  • SSG4575 - Enhancement Mode Power MOSFET (SeCoS Halbleitertechnologie GmbH)
  • SSG200EF60E - 200 AMP N-CHANNEL IGBT (Solid States Devices)
Other Datasheets by SeCoS
  • SSG4953 - Dual-P Enhancement Mode Power MOSFET
  • SSG4953P - Dual P-Ch Enhancement Mode Power MOSFET
  • SSG4902NA - Dual N-Channel Mode Power MOSFET
  • SSG4913 - P-Ch Enhancement Mode Power MOSFET
  • SSG4920N - Dual N-Channel MOSFET
  • SSG4930N - Dual N-Channel MOSFET
  • SSG4934N - Dual N-Channel Mode Power MOSFET
  • SSG4935P - P-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
Elektronische Bauelemente SSG4957 -7.7A, -30V,RDS(ON) 24m P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SSG4957 provide the designer with the best Combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Features * Low on-resistance * Simple drive requirement * Dual P MOSFET Package D1 D1 D2 D2 8 765 Date Code 4957SS Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range 123 4 S1 G1 S2 G2 Symbol VDS VGS ID@TA=25oC ID@TA=70oC IDM PD@TA=25oC Tj, Tstg SOP-8 0.40 0.90 6.20 5.80 0.25 0.19 0.25 o 45 0.375 REF 3.
Published: |